Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/63/4815917/04806085.pdf?arnumber=4806085
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of N-drift Layer Parameters on Static and Dynamic Performances of Ultra-high Voltage SiC IGBT;2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia);2020-11-29
2. Plasma triggered spark gap switch for multiple switch synchronization;Review of Scientific Instruments;2020-10-01
3. Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications;Electronics;2020-02-15
4. Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*;Chinese Physics B;2019-11-01
5. Active Optical Modulation for Series-Connected Emitter Turn-Off Thyristors;IEEE Transactions on Industrial Electronics;2019-07
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