Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications-Reference-Cited by-同舟云学术

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Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications

Published:2010-02 Issue:3 Volume:64 Page:393-395
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Nelson A.J.,Laurence T.A.,Conway A.M.,Behymer E.M.,Sturm B.W.,Voss L.F.,Nikolic R.J.,Payne S.A.,Mertiri A.,Pabst G.,Mandal K.C.,Burger A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

2. Single crystal growth and optical energy gap of gallium telluride

3. Surface passivation technology for III–V semiconductor nanoelectronics

4. A novel two-step chemical passivation process for CdZnTe detectors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural properties of poly-crystals embedded in glassy matrix of the ternary system CdO-TeO2-GeO2;Journal of Non-Crystalline Solids;2017-11

2. Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study;ACS Applied Materials & Interfaces;2016-12-07

3. Layered GaTe Crystals for Radiation Detectors;IEEE Transactions on Nuclear Science;2011-08

4. Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells;MRS Proceedings;2010

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