Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe-Reference-Cited by-同舟云学术

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Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

Published:1982-01 Issue:4 Volume:5 Page:323-413
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Gouskov A.,Camassel J.,Gouskov L.

Publisher

Elsevier BV

Subject

General Engineering

Reference164 articles.

1. S.A. Alusuisse, Gallium, Vol. 9 and 10. P. de la Breteque (ed), Marseille - France.

2. Zur Struktur der Galliumchalkogenide

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