Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization
Author:
Funder
JSPS
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method;Matsuyama;J. Non. Cryst. Solids.,1996
2. Kinetics of solid phase crystallization in amorphous silicon;Olson;Mater. Sci. Reports,1988
3. Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization;Narayan;Appl. Phys. Lett.,1982
4. Crystallization of amorphous silicon films by Nd:YAG laser heating;Fan;Appl. Phys. Lett.,1975
5. Laser annealing of boron-implanted silicon;Young;Appl. Phys. Lett.,1978
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