High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method-Reference-Cited by-同舟云学术

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High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

Published:1996-05 Issue: Volume:198-200 Page:940-944
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Matsuyama T.,Terada N.,Baba T.,Sawada T.,Tsuge S.,Wakisaka K.,Tsuda S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Morphology of silicon epitaxial layers grown by undercooling of a saturated tin melt

2. Semiconductor Silicon;Haberecht,1969

3. cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

4. Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films

5. Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method

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1. Electric-field-enhanced aluminum-induced crystallization of amorphous silicon thin film using decreasing stepwise current method;Journal of Non-Crystalline Solids;2023-11

2. Influence of current density on constant current electric field enhanced aluminum induced crystallization of amorphous silicon thin films;Thin Solid Films;2023-08

3. Rapid electric field-enhanced crystallization of amorphous silicon thin films with an aluminum layer;Materials Science in Semiconductor Processing;2023-05

4. Solid phase crystallization of amorphous silicon at the two-dimensional limit;Nanoscale Advances;2023

5. Formation of silicon layer through aluminothermic reduction of quartz substrates;Frontiers in Materials;2022-09-19

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