Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing-Reference-Cited by-同舟云学术

Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing

Published:2021-11 Issue: Volume:134 Page:106024
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Matsumura Ryo^ORCID,Ishii Satoshi^ORCID,Fukata Naoki

Funder

Japan Society for the Promotion of Science

JST

Iketani Science and Technology Foundation

Murata Science Foundation

Precursory Research for Embryonic Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%;Schmidt;Appl. Surf. Sci.,2017

5. Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization;Narayan;Appl. Phys. Lett.,1982

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