Test of Vegard's law in thin epitaxial SiGe layers-Reference-Cited by-同舟云学术

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Test of Vegard's law in thin epitaxial SiGe layers

Published:1995-12 Issue:1-4 Volume:157 Page:68-72
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kasper E.,Schuh A.,Bauer G.,Holländer B.,Kibbel H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. G. Theodorou, P.C. Kelires and C. Tserbak, to be published.

2. Lattice Parameter and Density in Germanium-Silicon Alloys1

3. Properties of Strained and Relaxed Silicon Germanium,1995

4. Properties of Strained and Relaxed Silicon Germanium;Herzog,1995

5. Properties of Strained and Relaxed Silicon Germanium;Baker,1995

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