Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC-Reference-Cited by-同舟云学术

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Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

Published:2014-10 Issue: Volume:188 Page:59-65
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zhou Tian-Yu,Liu Xue-Chao,Dai Chong-Chong,Huang Wei,Zhuo Shi-Yi,Shi Er-Wei

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Electrodeposition of Ni/SiC contacts

2. Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

3. Raman study of Ni and Ni silicide contacts on 4H– and 6H–SiC

4. Mechanisms of current flow in metal-semiconductor ohmic contacts

5. A critical review of ohmic and rectifying contacts for silicon carbide

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08

2. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024

3. Modulation of structure and corrosion behavior of Si-DLC coatings on AZ31 by applying a self-source bias;Ceramics International;2023-10

4. Fabrication and characterization of SiC–TiB2 composite ceramics used as infrared source material;Ceramics International;2023-04

5. Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate;Journal of Applied Physics;2022-02-14

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