Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4730435
Reference34 articles.
1. Interface Passivation for Silicon Dioxide Layers on Silicon Carbide
2. High‐temperature ohmic contact to n‐type 6H‐SiC using nickel
3. Structural characterisation of titanium silicon carbide reaction
4. Role of titanium in Ti/Ni ohmic contact on n-type 6H-SiC
5. Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
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2. Low temperature Cu/Ti/Al Ohmic contacts to p-type 4H-SiC;Journal of Alloys and Compounds;2022-04
3. Barrier properties and current conduction mechanism for metal contacts to lightly and highly doped p-type 4H-SiC;Japanese Journal of Applied Physics;2022-01-01
4. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height;Applied Physics Express;2021-12-17
5. Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC;Solid-State Electronics;2021-12
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