Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference35 articles.
1. Physics of Semiconductor Devices;Sze,1981
2. Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor‐insulator‐semiconductor and metal‐insulator‐semiconductor devices
3. Asymmetry in the SiO2 tunneling barriers to electrons and holes
4. Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes
5. Electrical characteristics of GaAs MIS Schottky diodes
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