Asymmetry in the SiO2 tunneling barriers to electrons and holes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference24 articles.
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2. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
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4. Characteristics of Cr-SiO2-nSi tunnel diodes
5. Dependence of the Si‐SiO2barrier height on SiO2thickness in MOS tunnel structures
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