High-Efficiency GaN Frequency Doubler Based on Thermal Resistance Analysis for Continuous Wave Input-Reference-Cited by-同舟云学术

High-Efficiency GaN Frequency Doubler Based on Thermal Resistance Analysis for Continuous Wave Input

Published:2023-09 Issue:9 Volume:70 Page:4565-4571
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dong Yazhou¹^ORCID,Liang Huajie²^ORCID,Liang Shixiong³^ORCID,Zhou Hongji¹,Yu Jianghua¹,Guo Hailong¹,Zeng Hongxin¹,Feng Zhihong²,Zhang Yaxin¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

2. Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute, University of Electronic Science and Technology of China, Huzhou, China

3. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10190331.pdf?arnumber=10190331

Reference42 articles.

1. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

2. Thermal conductivity and electrical properties of 6Hsilicon carbide

3. Gallium nitride devices for power electronic applications

4. Effect of dislocations on thermal conductivity of GaN layers

5. Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN

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