Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor‐insulator‐semiconductor and metal‐insulator‐semiconductor devices-Reference-Cited by-同舟云学术

Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor‐insulator‐semiconductor and metal‐insulator‐semiconductor devices

Published:1984-04-15 Issue:8 Volume:55 Page:2990-2994
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ghosh Amal K.,Feng Tom,Haberman Joel I.,Maruska H. Paul

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.333343

Reference20 articles.

1. Electronic characterization of indium tin oxide/silicon photodiodes

2. Fabrication and Characterization of SnO2/n-Si Solar Cells

3. Temperature effects in Schottky‐barrier silicon solar cells

4. Evidence of tunnel‐assisted transport in nondegenerate MOS and semiconductor‐oxide‐semiconductor diodes at room temperature

5. SIS Solar Cell Theory and Calculations

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