High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design-Reference-Cited by-同舟云学术

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High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design

Published:2024-09 Issue:5 Volume:33 Page:1196-1203
ISSN:2075-5597
Container-title:Chinese Journal of Electronics
language:
Short-container-title:Chinese J. Elect.

Author:

Dong Yazhou¹,Zhou Tianchi¹,Liang Shixiong²,Gu Guodong²,Zhou Hongji¹,Yu Jianghua¹,Guo Hailong¹,Zhang Yaxin¹

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China,611731

2. Hebei Semiconductor Research Institute,National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang,China,050051

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/9970761/10669734/10669724.pdf?arnumber=10669724

Reference29 articles.

1. A 90 GHz Hybrid Switching Pulsed-Transmitter for Medical Imaging

2. Early Gesture Recognition With Reliable Accuracy Based on High-Resolution IoT Radar Sensors

3. A Comprehensive Survey on Internet of Things (IoT) Toward 5G Wireless Systems

4. Future Intelligent and Secure Vehicular Network Toward 6G: Machine-Learning Approaches

5. THz for space: The golden age

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing;Applied Physics Letters;2024-04-15

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