Implantation angle dependence of ion irradiation damage in GaN
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. GaN: Processing, defects, and devices
2. Damage to epitaxial GaN layers by silicon implantation
3. Effect of ion species on the accumulation of ion-beam damage inGaN
4. Three-step amorphisation process in ion-implanted GaN at 15 K
5. Suppression of rare-earth implantation-induced damage in GaN
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4. Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium;Journal of Applied Physics;2016-10-28
5. Sputtering yields exceeding 1000 by 80keV Xe irradiation of Au nanorods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-12
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