Advanced activation of ultra-shallow junctions using flash-assisted RTP-Reference-Cited by-同舟云学术

Advanced activation of ultra-shallow junctions using flash-assisted RTP

Published:2005-12 Issue: Volume:124-125 Page:24-31
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lerch W.,Paul S.,Niess J.,McCoy S.,Selinger T.,Gelpey J.,Cristiano F.,Severac F.,Gavelle M.,Boninelli S.,Pichler P.,Bolze D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. International Technology Roadmap for Semiconductors, 2003 ed., Update December 2004. Semiconductor Industry Association, San Jose, CA.

2. S. McCoy, E.A. Arevalo, J.C. Gelpey, D.F. Downey, 12th International Conference on Advanced Thermal Processing of Semiconductors—RTP 2004, 2004, pp. 99–108.

3. S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, Workshop on Ultra-shallow Junction Formation, USJ 2003, 27 April–1 May 2003, Santa Cruz, CA, 2003, p. 111.

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