Rapid thermal process driven intra-die device variations-Reference-Cited by-同舟云学术

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Rapid thermal process driven intra-die device variations

Published:2022-12 Issue: Volume:152 Page:107052
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tsai C.H.,Aboy M.,Pelaz L.,Hsu Y.H.,Woon W.Y.^ORCID,Timans P.J.,Lee C.K.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Multi-chip technologies to unleash computing performance gains over the next decade;Su,2017

2. RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology;Ahsan,2006

3. Reduction of RTA-driven intra-die variation via model-based layout optimization;Scott,2009

4. Recent developments in rapid thermal processing;Fiory;J. Electron. Mater.,2002

5. A review of thermal processing in the subsecond range: semiconductors and beyond;Rebohle;Semicond. Sci. Technol.,2016

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1. Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration;Advanced Science;2024-05-13

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