Abstract
FinFETs have gained a lot of demand in the family of multigate FET devices in the recent years. In this view, this manuscript aims to design different FinFET architectures to observe the analog and circuit performance. A total of five structures namely Conventional FinFET, Lightly doped S/D, Underlap FinFET, Single-k spacer, and Dual-k spacer FinFET has been designed and performance has been analysed. The best performance is obtained for dual-k spacer FinFET. Moreover, the dimensional variations such as gate length (Lg), fin width (Wfin) and fin height (Hfin) for the duak-k spacer FinFET is performed and it is found that lowering the Lg and Wfin, and increasing the Hfin would be a better option in order to enhance the device performance. Furthermore, at the optimized device dimensions the circuit analysis for inverter and single stage common source amplifier is performed. The gain for the designed single stage common stage amplifier is noticed to be 1.8155.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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