The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2-Reference-Cited by-同舟云学术

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The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2

Published:2004-12 Issue: Volume:114-115 Page:198-202
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Werner M.,van den Berg J.A.,Armour D.G.,Carter G.,Feudel T.,Herden M.,Bersani M.,Giubertoni D.,Bailey P.,Noakes T.C.Q.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Fluorine in Silicon: Diffusion, Trapping, and Precipitation

2. Anomalous diffusion of fluorine in silicon

3. Effect of fluorine on the diffusion of boron in ion implanted Si

4. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon

5. Electrically active defects in BF2+ implanted and germanium preamorphized silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08

2. Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F;Applied Physics Letters;2005-04-11

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