Fluorine in Silicon: Diffusion, Trapping, and Precipitation
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.90.155901/fulltext
Reference22 articles.
1. Epitaxial regrowth ofn+andp+polycrystalline silicon layers given single and double diffusions
2. Metal–oxide–semiconductor gate oxide reliability and the role of fluorine
3. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon
4. Anomalous diffusion of fluorine in silicon
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