Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325689
Reference10 articles.
1. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
2. Damage Effects in Boron and BF 2 Ion‐Implanted p+‐n Junctions in Silicon
3. Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon
4. Anomalous migration of ion‐implanted Al in Si
5. Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry
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