Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89259
Reference2 articles.
1. Binding energies in atomic negative ions
2. Enhanced diffusion during the implantation of arsenic in silicon
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4. Relative sensitivity factors for positive atomic and molecular ions sputtered from Si and GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-11
5. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
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