Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation-Reference-Cited by-同舟云学术

Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation

Published:2005-08 Issue:1-2 Volume:237 Page:203-207
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Herden Marc,Gehre Daniel,Feudel Thomas,Wei Andy,Bersani Massimo,Mannino Giovanni,Berg Jaap v.d.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. T. Feudel, M. Horstmann, M. Gerhardt, M. Herden, L. Herrmann, D. Gehre, C. Krueger, D. Greenlaw, M. Raab, Temperature scaling for 35nm gate length high-performance CMOS, in: E-MRS Spring Meeting 2004, C-IX.2, Strasbourg, 2004.

2. M. Bersani, P. Lazzeri, D. Giubertoni, M. Barozzi, E. Boscolo Marchi, M. Anderle, Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments, in: International Conference on Ion Implantation Technology 2002, Proceedings, Taos, 2002.

3. M. Anderle, M. Barozzi, M. Bersani, D. Giubertoni, P. Lazzeri, Ultra shallow depth profiling by secondary ion mass spectrometry, in: Characterization and Metrology for ULSI Technology: 2003 International Conference, Proceedings 683, NY (2003), p. 695.

4. D. Giubertoni, M. Barozzi, E. Boscolo, M. Anderle, M. Bersani, Boron Ultra Shallow SIMS profiles optimization using oblique incidence oxygen beam, in: Proceedings of Ultra Shallow Junctions 2003, 7th International Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors, Santa Cruz (CA), April 27–May 1st, 2003, p. 275.

5. M. Werner, J.A. van den Berg, D.G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, P. Bailey, T.C. Noakes, The interaction between Xe and F in Si (100) pre-amorphized with Xe and implanted with low energy BF2, in: E-MRS Spring Meeting 2004, B-X.4, Strasbourg, 2004.