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Temperature scaling for 35nm gate length high-performance CMOS

  • Published:2004-01 Issue:4-6 Volume:7 Page:369-374
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Feudel Th.,Horstmann M.,Gerhardt M.,Herden M.,Herrmann L.,Gehre D.,Krueger Ch.,Greenlaw D.,Raab M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Fukutome H, et al. Proceedings of the IEDM 2003. p. 485.

2. Greenlaw D, et al. Proceedings of the IEDM 2003. p. 277.

3. Lindsay R, et al. Proceedings of the MRS 2002. vol. 717, p. 65.

4. Shima A, et al. Proceedings of the IEDM 2003. p. 493.

5. Horstmann M, et al. E-MRS spring meeting 2004, Symposium B, Strasbourg, accepted for publication.

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2. Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
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