Ultra shallow and abrupt n+–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50nm Si metal-oxide-semiconductor devices-Reference-Cited by-同舟云学术

Ultra shallow and abrupt n+–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50nm Si metal-oxide-semiconductor devices

Published:2004-07 Issue:2 Volume:110 Page:185-189
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Oh Jihun,Im Kiju,Ahn Chang-Geun,Yang Jong-Heon,Cho Won-ju,Lee Seongjae,Park Kyoungwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Nanoscale CMOS

2. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2002.

3. Point defects and dopant diffusion in silicon

4. Transient enhanced diffusion of boron in Si

5. Y. Nakahara, K. Takeuchi, T. Tatsumi, Y. Ochiai, S. Manako, S. Samukawa, A. Furukawa, Tech. Digest 1996 Symposium, VLSI Technology, 1996, pp. 174–175.

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