Concentration-dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology-Reference-Cited by-同舟云学术

Concentration-dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

Published:2010-12-08 Issue:5 Volume:24 Page:465-477
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Menon P. S.,Kandiah K.,Ehsan A. A.,Shaari S.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.792/fullpdf

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5. Feng S Lu C Influence of InP cap layer on photo-responsivity of InP/InGaAs PIN detector 2332 2334

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