Affiliation:
1. Universiti Teknikal Malaysia Melaka (UTeM)
Abstract
Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. SilvacoTCAD (Technology Computer Aided Design) manages simulation tasks and analyzing simulation results when ultra-shallow junction formation is using low-boron activation on Phosphorus, Antimony and Arsenic.A stimulate process like implantation, diffusion and dopant activation and epitaxial growth in different semiconductor materials has been analyzed as well as investigate the effects of energy of boron ion beams on ultra shallow junction formation.As a result, the electrical characteristics of NMOS structure by obtaining graph of IDVGSand IDVDShas been studied when there are variations in junction length (Xj), and gatelength (Lg).
Publisher
Trans Tech Publications, Ltd.
Reference16 articles.
1. T. S Huang, M. N Rahaman, B. S Bal. Alumina-Tantalum Composite For Femoral Head Applications In Total Hip Arthroplasty. C29. pp-1936-1941. (2009).
2. Sidney Soclof. Design and Applications of Analog Integrated Circuits. First Edition. New Delhi: PHI Learning Private Limited. pp-27, 38. (2008).
3. S. Banerjee. J. Mathew, D. K Pradhan, S. P Mohanty , M. Ciesielski. Variation-Aware TED – Based Approach for Nano-CMOS RTL Leakage Optimization . 24th International Conference on VLSI Design. (2011).
4. Vyatkin A. F, ZinenkoV. IPustovit A. N, Agafonov Y.A. Ultra shallow p-n junction formation by ion implantation at high energy. (2002). pp-594-596. IEEE.
5. Maria Aboy, Lourdes Pelaz, Luis A. Marques, Juan Barbolla. Atomistic Modelling Of Boron Activation And Deactivation For Ultra Shallow Junction Formation. (2003). pp-151-154. IEEE.