Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs-Reference-Cited by-同舟云学术

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Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

Published:2009-11 Issue:1-2 Volume:165 Page:111-114
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rimada J.C.,Prezioso M.,Nasi L.,Gombia E.,Mosca R.,Trevisi G.,Seravalli L.,Frigeri P.,Bocchi C.,Franchi S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Quantum Dot Heterostructures;Bimberg,1998

2. Quantum-Dot Optoelectronic Devices

3. Quantum dot strain engineering of InAs∕InGaAs nanostructures

4. Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium

5. Effects of the quantum dot ripening in high-coverage InAs∕GaAs nanostructures

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1. Electron levels of defects in In(Ga)As/(In)GaAs nanostructures: A review;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-06-21

2. Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers;Microelectronic Engineering;2022-07

3. InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels;Microelectronic Engineering;2021-02

4. Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement;Semiconductor Science and Technology;2020-08-11

5. Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure;Microelectronic Engineering;2020-06

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