Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon-Reference-Cited by-同舟云学术

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Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon

Published:1983-12 Issue:1-3 Volume:218 Page:327-332
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Wittmaack K.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Depth Profiling of n‐Type Dopants in Si and GaAs Using Cs+ Bombardment Negative Secondary Ion Mass Spectrometry in Ultrahigh Vacuum

2. Observation of gas absorption in evaporated amorphous silicon films using secondary ion mass spectrometry

3. Hydrogen depth profiling using SIMS—Problems and their solutions

4. Secondary ion quadrupole mass spectrometer for depth profiling—design and performance evaluation

5. The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation

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