The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation

Author:

Wittmaack K

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference42 articles.

1. K. Wittmaack, in: Inelastic Ion-Surface Collisions, Eds. N.H. Tolk, J.C. Tully, W. Heiland and C.W. White (Academic Press, in press).

2. Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids

3. Concentration profiles of boron implantations in amorphous and polycrystalline silicon

4. Ion Implantation in Semiconductors;Wittmaack,1975

5. Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layers

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2. Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry;Bulletin des Sociétés Chimiques Belges;2010-09-01

3. SIMS analysis of xenon and krypton in uranium dioxide: A comparison of two models of gas-phase ionisation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-12

4. Surface transient effects in ultralow-energy O2+ sputtering of silicon;Surface and Interface Analysis;2005

5. Electron beam oxidation of shallow implants;Materials Science in Semiconductor Processing;1999-10

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