Surface transient effects in ultralow-energy O2+ sputtering of silicon

Author:

Chanbasha A. R.,Wee A. T. S.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01

2. Semiconductor profiling with sub-nm resolution: Challenges and solutions;Applied Surface Science;2008-12

3. Ultralow-energy SIMS for shallow semiconductor depth profiling;Applied Surface Science;2008-12

4. Surface transient effects in ultralow-energy Cs+ sputtering of Si;Surface and Interface Analysis;2007

5. Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs[sup +] secondary ion mass spectrometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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