Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data-Reference-Cited by-同舟云学术

Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data

Published:1996-11-15 Issue:1719 Volume:354 Page:2731-2764
ISSN:1364-503X
Container-title:Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences
language:en
Short-container-title:Phil. Trans. R. Soc. Lond. A

Author:

Publisher

The Royal Society

Subject

General Physics and Astronomy,General Engineering,General Mathematics

Link

https://royalsocietypublishing.org/doi/pdf/10.1098/rsta.1996.0126

Reference64 articles.

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5. Avau D. V andervorst W. & Maes H. E. 1988 T ransient effects during SIMS depth profiling w ith oxygen. Surf. Interface A nalysis 11 522-528.

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