Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces-Reference-Cited by-同舟云学术

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Published:1998-06 Issue: Volume:130-132 Page:352-356
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yokoyama Shin,Ikeda Norihiko,Kajikawa Kouji,Nakashima Yoshimitsu

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. D.E. Aspnes, J. Nishizawa, W.F. van der Weg (Eds.), Appl. Surf. Sci. 112, Special Issue for Proceedings of the 4th Int. Symp. on Atomic Layer Epitaxy and Related Surface Processes, Lintz Austria, 1996, North-Holland, New York, 1997.

2. Area-selective CVD of metals

3. Atomic layer controlled deposition of silicon nitride with self‐limiting mechanism

4. Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

5. Ideal hydrogen termination of the Si (111) surface

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