Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference62 articles.
1. Control of relative etch rates of SiO2 and Si in plasma etching
2. Plasma reactor design for the selective etching of SiO2 on Si
3. Application of RF Discharges to Sputtering
4. M. Sekine, T. Arikado, H. Okano, Y. Horiike, in: Proceedings of the Ninth Symposium on Dry Process, Institute of Electronics Engineers of Japan, Tokyo, 1986, p. 42.
Cited by
95 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献