Photoepitaxy of Si and Ge by synchrotron radiation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference27 articles.
1. Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption
2. Gas and adsorbate excitation pathways in synchrotron radiation excited Si growth using disilane
3. Species-specific growth kinetics and film properties in synchrotron radiation-excited Si growth with disilane
4. Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
5. Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy
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1. Electronic and thermal reaction pathways in the synchrotron radiation-excited modification and epitaxy of silicon-based materials;Thin Solid Films;2007-04
2. Application and Perspective of Synchrotron Light-excited Process in Semiconductor Development;IEEJ Transactions on Electronics, Information and Systems;2007
3. Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing;Journal of Applied Physics;2005-05-15
4. Present Status and Research Plan of Saga Synchrotron Light Research Center;IEEJ Transactions on Electronics, Information and Systems;2004
5. Short-period SinGem strained-layer superlattices grown from gas sources by synchrotron-radiation-excited chemical-beam epitaxy;Applied Physics Letters;2003-07-21
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