Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference15 articles.
1. Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption
2. H. Akazawa and Y. Utsumi, to be published.
3. Gas and adsorbate excitation pathways in synchrotron radiation excited Si growth using disilane
4. Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films
5. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
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