Application and Perspective of Synchrotron Light-excited Process in Semiconductor Development-Reference-Cited by-同舟云学术

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Application and Perspective of Synchrotron Light-excited Process in Semiconductor Development

Published:2007 Issue:2 Volume:127 Page:126-132
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Tanaka Tooru¹,Guo Qixin²,Nishio Mitsuhiro²,Ogawa Hiroshi¹,Motooka Teruaki³

Affiliation:

1. Synchrotron Light Application Center, Saga University

2. Dept. of Electrical & Electronic Engineering, Faculty of Science & Engineering, Saga University

3. Dept. of Materials Science & Engineering, Kyushu University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/127/2/127_2_126/_pdf

Reference16 articles.

1. (3) H. Akazawa and Y. Utsumi : “Synchrotron Radiation Excited Epitaxy Using Disilane”, Hoshako, Vol. 8, No. 1, pp. 30-48 (1995) (in Japanese)

2. (4) Y. Sugita, Y. Nara, and T. Ito : “Photo-Stimulated Removal of the Chenical-Oxide on Si (100) and Its Application to the Gas-Source Homo-Epitaxy”, Hoshako, Vol. 8, No. 1, pp. 49-68 (1995) (in Japanese)

3. (5) H. Akazawa : “Photoepitaxy of Si and Ge by synchrotron radiation”, Appl. Surface Sci., Vol. 106, pp. 211-222 (1996)

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