Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1900295
Reference17 articles.
1. Growth and equilibrium structures in the epitaxy of Si on Si(001)
2. Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Surface Morphology during Multilayer Epitaxial Growth of Ge(001)
5. Dynamics of growth roughening and smoothening on Ge (001)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates;Applied Surface Science;2018-04
2. Real-time ellipsometric modeling and characterization of the evolution of nanometer-scale Ge islands and pits in Ge homoepitaxy;Journal of Applied Physics;2009-11-15
3. Germanium Negative Islands Self-Organized in Homoepitaxy;Applied Physics Express;2008-07-11
4. Hydrogen induced roughening and smoothing in surface morphology during synchrotron-radiation-excited GeH4-source homoepitaxy on Ge(001);Journal of Applied Physics;2006-05-15
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