Real-time ellipsometric modeling and characterization of the evolution of nanometer-scale Ge islands and pits in Ge homoepitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3259393
Reference19 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy
3. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.
4. Microstructure and strain relief of Ge films grown layer by layer on Si(001)
5. Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing
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1. Initial nucleation stage in photo-CVD of GeH4 on SiO2 substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time;Journal of Vacuum Science & Technology A;2018-07
2. Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates;Applied Surface Science;2018-04
3. In Situ Characterization of Epitaxy;Handbook of Crystal Growth;2015
4. 70Ge nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
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