Hydrogen induced roughening and smoothing in surface morphology during synchrotron-radiation-excited GeH4-source homoepitaxy on Ge(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2194232
Reference40 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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4. Initial nucleation stage in photo-CVD of GeH4 on SiO2 substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time;Journal of Vacuum Science & Technology A;2018-07
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