Nucleation mechanisms during MBE growth of lattice-matched and strained III–V compound films-Reference-Cited by-同舟云学术

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Nucleation mechanisms during MBE growth of lattice-matched and strained III–V compound films

Published:1998-06 Issue: Volume:130-132 Page:357-366
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Joyce B.A,Vvedensky D.D,Avery A.R,Belk J.G,Dobbs H.T,Jones T.S

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Surface evolution during molecular-beam epitaxy deposition of GaAs

2. An STM study of molecular-beam epitaxy growth of GaAs

3. The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)

4. Growth mode evolution during homoepitaxy of GaAs (001)

5. The nature of island formation in the homoepitaxial growth of GaAs(110)

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4. Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces;EPL (Europhysics Letters);2012-03-01

5. Surface chemistry and growth mechanisms studies of homo epitaxial (100) GaAs by laser molecular beam epitaxy;Applied Surface Science;2011-12

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