An STM study of molecular-beam epitaxy growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. A combined molecular‐beam epitaxy and scanning tunneling microscopy system
3. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
4. Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
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1. Faceting of local droplet-etched nanoholes in AlGaAs;Physical Review Materials;2018-10-08
2. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy;Japanese Journal of Applied Physics;2015-04-07
3. Non-Ostwald coarsening of the GaAs(001) surface;Physical Review B;2004-04-09
4. Strained-layer heteroepitaxy to fabricate self-assembled semiconductor islands;Nanostructured Materials and Nanotechnology;2002
5. Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfaces;Progress in Surface Science;2001-02
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