Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1905/fulltext
Reference10 articles.
1. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
2. Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
3. Optical investigation of interface roughness and defect incorporation in GaAs/AlGaAs quantum wells grown with and without growth interruption
4. High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection
5. The (001) surface of molecular-beam epitaxially grown GaAs studied by scanning tunneling microscopy
Cited by 56 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interrupted Growth to Manipulate Phase Separation in DIP:C60 Organic Semiconductor Blends;The Journal of Physical Chemistry C;2018-01-10
2. Recent Advancement of Semiconductor Materials and Devices;Journal of the Society of Materials Science, Japan;2017
3. Topography of epitaxial GaAs surfaces for growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
4. Physics interplay of the LHC and the ILC;Physics Reports;2006-04
5. Stress and surface energies versus surface nanostructuring: the InGaAs/InP(001) epitaxial system;Journal of Crystal Growth;2004-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3