Recent Advancement of Semiconductor Materials and Devices
Author:
Affiliation:
1. Graduate School of Advanced Sciences of Matter, Hiroshima University
Publisher
Society of Materials Science, Japan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/jsms/66/2/66_185/_pdf
Reference41 articles.
1. 1) M. Henini, “Molecular beam epitaxy from research to mass production”, Chap. 1 (2012) Elsevier, Oxford.
2. 2) J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, “Dynamics of film growth of GaAs by MBE from rheed observations”, Applied Physics A Solids and Surfaces, Vol.31, Issue 1, pp.1-8 (1983).
3. 3) J. J. Harris, B. A. Joyce, and P. J. Dobson, “Oscillations in the surface structure of Sn-doped GaAs during growth by MBE”, Surface Science Vol.103, Issue 1, pp.L90-L96 (1981).
4. 4) T. Ide, A. Yamashita, and T. Mizutani , “Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling”, Physical Review B, Vol. 46, Issue 3, pp.1905-1908 (1992).
5. 5) H. Sakaki, M. Tanaka, and J. Yoshino, “One atomic layer heterointerface fluctuations in GaAs-AlAs quantum well structures and their suppression by insertion of smoothing period in molecular beam epitaxy”, Japanese Journal of Applied Physics, Vol.24, Part 2, Number 6, pp.L417-L420 (1985).
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