Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1209/0295-5075/97/68011/pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Initial Damage of Composite Materials;Advanced Structured Materials;2019
2. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices;Journal of Applied Physics;2018-11-21
3. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch;Epitaxy;2018-03-07
4. Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping;Nanotechnology;2017-05-08
5. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors;AIP Conference Proceedings;2014
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