Surface evolution during molecular-beam epitaxy deposition of GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.2811/fulltext
Reference10 articles.
1. Growth of III–V semiconductors by molecular beam epitaxy and their properties
2. Dynamics of film growth of GaAs by MBE from Rheed observations
3. A combined molecular‐beam epitaxy and scanning tunneling microscopy system
4. Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy
5. Diffraction from stepped surfaces
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