Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes-Reference-Cited by-同舟云学术

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Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes

Published:2017-07-04 Issue:30 Volume:28 Page:305702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Rosa Barbara L T,Marçal Lucas A B,Andrade Rodrigo Ribeiro,Pinto Luciana Dornellas,Rodrigues Wagner N,Souza Patrícia Lustoza,Pires Mauricio Pamplona,Nunes Ricardo Wagner,Malachias Angelo

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=30/a=305702/pdf

Reference55 articles.

1. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

2. Scanned Probe Imaging of Single-Electron Charge States in Nanotube Quantum Dots

3. Spontaneous ordering of nanostructures on crystal surfaces

4. Near-Field Coherent Spectroscopy and Microscopy of a Quantum Dot System

5. Structural properties of self-organized semiconductor nanostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning Tunneling Measurements in Membrane-Based Nanostructures: Spatially-Resolved Quantum State Analysis in Postprocessed Epitaxial Systems for Optoelectronic Applications;ACS Applied Nano Materials;2019-06-24

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