Growth mode evolution during homoepitaxy of GaAs (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111137
Reference10 articles.
1. Molecular beam epitaxy of semiconductor films—atomic dimension control and the evaluation of crystal growth dynamics
2. Surface evolution during molecular-beam epitaxy deposition of GaAs
3. Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction
4. Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy
5. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
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