The microstructure and thermal stability of CBE grown heavily carbon doped GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. AlGaAs/GaAs heterojunction bipolar transistors with heavily C‐doped base layers grown by flow‐rate modulation epitaxy
2. Carbon diffusion in undoped,n‐type, andp‐type GaAs
3. L. Pauling, in: The Nature Of The Chemical Bond (Cornell Univ. Press, Ithaca, New York).
4. High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
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1. Exploring optoelectronic properties of C-doped GaAs for photocathode application from first-principles calculation;AIP Advances;2022-01-01
2. Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors;Journal of Crystal Growth;2021-10
3. Dicarbon defects in as-grown and annealed carbon-doped InAs;Journal of Applied Physics;2007-10-15
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