In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Surface emitting devices with distributed Bragg reflectors grown by highly precise molecular beam epitaxy
2. InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy
3. Dynamic optical reflectivity to monitor the real‐time metalorganic molecular beam epitaxial growth of AlGaAs layers
4. Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy
5. Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors
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1. In situ spectral reflectance analysis of the early stages of GaN thermal decomposition;Optik;2022-09
2. Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy;Journal of Crystal Growth;2007-01
3. In situ optical monitoring of layer composition in the chemical beam epitaxy of AlGaAs from amine-alane sources;Journal of Materials Science: Materials in Electronics;2003
4. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy;Journal of Applied Physics;1999-07
5. Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs;Vacuum;1999-05
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